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- Manufacturer No：SIHG70N60EF-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：398931
- Description：MOSFET N-CH 600V 70A TO-247AC
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- 10 $1405.551 $14055.51
- 100 $1391.634 $139163.4
- 1000 $1377.855 $1377855
- 10000 $1364.212 $13642120
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- Manufacturer No：SIHG70N60EF-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHG70N60EF-GE3
- SKU：398931
- Description：MOSFET N-CH 600V 70A TO-247AC
User Guide
User Guide
SIHG70N60EF-GE3 Details
MOSFET N-CH 600V 70A TO-247AC
SIHG70N60EF-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Factory Lead Time: 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- JESD-30 Code: R-PSFM-T3
- Vgs (Max): ±30V
- Continuous Drain Current (ID): 70A
- Current - Continuous Drain (Id) @ 25°C: 70A Tc
- Power Dissipation-Max: 520W Tc
- Pulsed Drain Current-Max (IDM): 229A
- Avalanche Energy Rating (Eas): 1706 mJ
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Published: 2014
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- JEDEC-95 Code: TO-247AC
- Drain-source On Resistance-Max: 0.038Ohm
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Rds On (Max) @ Id, Vgs: 38m Ω @ 35A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 100V
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